This collaboration expands Anson's power product portfolio, covering high-performance 650V lateral gallium nitride (GaN) solutions for AI data centers, automotive, aerospace, and other key markets.

Summary:

Onsemi and GlobalFoundries (GF) have reached a new cooperation agreement, further consolidating their leadership position in the field of smart power products. The two sides will jointly develop and manufacture the next generation of gallium nitride (GaN) power devices, starting with 650V devices. Ansenmei's series of products will combine the GlobalFoundries 200mm Enhanced Gallium Nitride on Silicon (eMode GaN on silicon) process, as well as its industry-leading silicon-based driver, controller, and enhanced heat dissipation packaging technology, to provide smaller and more energy-efficient optimized system solutions for AI data centers, automotive, industrial, aerospace, and other application scenarios.

News highlights:

·Ansenmei and Grofond have partnered to develop advanced 200mm enhanced transverse silicon-based GaN process technology for key markets, starting with 650V devices.

·Anson's GaN product portfolio is highly suitable for high power density systems - scenarios where power demand continues to rise but physical size is strictly limited, such as AI data centers, electric vehicles, renewable energy, and aerospace applications.

·The product application covers multiple high growth markets, including power supplies, DC-DC converters, car chargers, micro photovoltaic inverters, energy storage systems, and motor drivers.

Shanghai, China, December 19, 2025- Onsemi (NASDAQ: ON) announced that it has signed a cooperation agreement with GlobalFoundries (NASDAQ: GFS, GF). Both parties will jointly develop and manufacture advanced GaN power products based on Grofond's state-of-the-art 200mm enhanced silicon-based GaN process, with cooperation starting from 650V devices. This collaboration will accelerate Ansenmei's high-performance GaN devices and integration rate level technology roadmap, by expanding its high-voltage product portfolio to meet the growing power demands in fields such as AI data centers, electric vehicles, renewable energy, industrial systems, and aerospace.

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This cooperation will combine Ansenmei's system and product expertise with Grofond's advanced GaN technology to create new 650V power devices for high growth markets. These GaN products, paired with our silicon-based drivers and controllers, will help customers achieve innovation and build smaller, more energy-efficient power systems for scenarios such as AI data centers, electric vehicles, and aerospace applications. We plan to start providing samples to customers in the first half of 2026 and rapidly expand to mass production scale. ”Dinesh Ramanathan, Senior Vice President of Corporate Strategy at Ansenmei, stated.

We have combined the 200mm silicon-based GaN platform with Anson's deep expertise in systems and products, which not only accelerates the implementation of efficient solutions, but also builds a more resilient supply chain for key markets such as data centers, automotive, industrial, aerospace, etc. With Ansenmei as a key partner, we will continue to promote the upgrading of GaN semiconductor technology to meet the evolving needs in the fields of artificial intelligence, electrification, and sustainable energy. ”Mike Hogan, Chief Business Officer of Grosvenor, said.

Ansenmei combines its industry-leading silicon-based drivers, controllers, and enhanced heat dissipation packaging technology with Grofond's 650V GaN technology platform to create GaN devices with higher power density and energy efficiency. The specific application scenarios of the product include: AI data center power supply and its DC-DC converter, electric vehicle on-board charger and its DC-DC converter, micro photovoltaic inverter and energy storage system, as well as motor drivers and DC-DC converters in the industrial and aerospace fields.

This collaboration further expands ON Semiconductor's leading power semiconductor product portfolio, now covering the full spectrum of GaN technology - from low-voltage, medium voltage, high-voltage lateral GaN to ultra-high voltage vertical GaN. This comprehensive layout enables system designers to build the next generation power architecture, achieving higher power output in a smaller size. The core advantages of GaN technology include:

Higher switching frequency - By operating at higher switching frequencies, GaN technology can help designers reduce the number of components, shrink system size, and lower costs, while improving energy efficiency and heat dissipation performance.

Bidirectional conductivity capability - GaN's bidirectional conductivity supports a new topology structure, which can replace up to four traditional unidirectional transistors, thereby reducing costs and simplifying designs.

Integrated functionality - Integrating GaN FET with driver, controller, isolation, and protection functions within a single package can shorten the design cycle and reduce electromagnetic interference. Enhanced heat dissipation packaging and optimized gate drivers ensure performance and reliability even at high switching speeds.

Supply situation

Ansenmei plans to start providing samples in the first half of 2026.

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