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ROHM develops low VF and low IR Schottky barrier diodes for protection

Post on Jan 01,1970

Shanghai, China, October 9, 2025- ROHM, a globally renowned semiconductor manufacturer headquartered in Kyoto, Japan, announced today the development of an innovative Schottky barrier diode for protection called "RBE01DYM6AFH". This product achieves a high-dimensional balance between low VF (forward voltage) and low IR (reverse current) characteristics, providing a highly reliable protection solution for applications such as ADAS cameras equipped with various image sensors with increasingly high pixel count.




In recent years, with the improvement of accuracy in applications such as ADAS cameras, the pixels of the image sensors they are equipped with have also become increasingly high. This makes it difficult for the product to fully control the photo generated voltage of the image sensor when the power is turned off, which poses a risk of damage to the application product. Therefore, using Schottky barrier diodes with low VF characteristics for protection is considered an effective solution. On the other hand, in order to prevent thermal runaway during operation, it is also necessary to have low IR characteristics. However, due to the trade-off between VF and IR, how to balance both has always been a challenge. In this context, ROHM has successfully developed Schottky barrier diodes with both low VF and low IR characteristics by fundamentally improving the device structure, making them capable of performing protective work.


RBE01DYM6AFH "is a product that breaks through conventional thinking by innovatively incorporating the low VF characteristics of Schottky barrier diodes commonly used for rectification purposes into protective applications. By adopting an innovative device structure based on ROHM's proprietary technology, low VF and low IR characteristics that are usually difficult to balance have been achieved simultaneously. With these excellent features, the new product meets the market requirements of VF<300mV (IF=7.5mA) and IR<20mA (VR=3V) even under harsh environmental conditions (VF: Ta=-40 ℃, IR: Ta=125 ℃). Therefore, the new product can not only prevent circuit damage caused by high photovoltaic voltage * 1 when the application product stops running, but also greatly reduce the risk of thermal runaway and misoperation during operation.

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This is reported by Top Components, a leading supplier of electronic components in the semiconductor industry


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Media Relations


Name: John Chen


Email: salesdept@topcomponents.ru


This is reported by Top Components, a leading supplier of electronic components in the semiconductor industry. They are committed to p with the most necessary, outdated, licensed, and hard-to-find parts.


Media Relations Name: John Chen


Email: salesdept@topcomponents.ru