Beijing, China (October 13, 2025) - The "Digital Energy Joint Laboratory" jointly established by leading semiconductor device supplier GigaDevice (stock code 603986) and Nano Micro Semiconductor (NASDAQ stock code: NVTS) was officially unveiled in Hefei. This laboratory combines the profound accumulation in the field of GD32 MCU with the product advantages of nano micro semiconductors in high-frequency, high-speed, high integration gallium nitride and GeneSiC silicon carbide with groove assisted planar technology, providing intelligent and efficient digital energy solutions for emerging markets such as AI data centers, photovoltaic inverters, energy storage, charging piles, and electric vehicles.

Huang Xiucheng (right), Vice President of Nano Semiconductor System Application Engineering, and Li Baokui (left), Senior Vice President of Zhaoyi Innovation and General Manager of MCU Business Unit, took a photo together

Consolidate the cornerstone of digital energy and inject strong "core" power

Since its establishment, the Digital Energy Joint Laboratory has achieved a series of fruitful results, launching solutions such as 4.5kW, 12kW server power supplies, and 500W single-stage micro inverters. These solutions adopt advanced topologies to meet the evolving needs of industries such as high efficiency and high power density. The implementation of the plan not only demonstrates the innovative strength of Zhaoyi Innovation and Nano Micro Semiconductor in the field of digital energy, but also highlights the unique advantages and market competitiveness brought by the integration of their technologies.

The 500W single-stage photovoltaic micro inverter solution is based on the innovative GD32G553 MCU and nano micro bidirectional GaNFast from Zhaoyi? Gallium nitride power chips adopt a single-stage one to one architecture, which has advantages such as high efficiency, low loss, high integration, and cost optimization. Combining optimized hybrid modulation strategy and soft switching technology, the peak efficiency exceeds 97.5%, CEC efficiency exceeds 97%, and MPPT efficiency exceeds 99.9%. Single level architecture directly realizes the conversion from DC to AC, eliminating the need for a first level DC-DC conversion link, improving power density, and reducing the number of devices and losses. By using magnetic integration design and nano micro bidirectional gallium nitride switches, the size can be further reduced and BOM costs can be lowered.

Based on the innovative GD32G553 MCU from Zhaoyi, combined with nano GaNSafe? The 4.5kW and 12kW AI server power solutions for gallium nitride power chips and third-generation fast silicon carbide MOSFETs are designed specifically for AI and traditional servers, as well as ultra large scale data centers. The 12kW scheme not only complies with the Open Compute Project (OCP), Open Rack v3 (ORv3), and CRPS specifications, but also surpasses the 80 PLUS Ruby standard with a minimalist component layout, achieving a peak efficiency of 97.8%.

Moving towards global energy transformation and promoting the integration of green and intelligent technologies

Against the backdrop of global energy transition, the demand for digital energy solutions is rapidly growing. AI、 Emerging technologies such as big data and cloud computing are constantly driving changes in the energy industry. Especially in the fields of green energy and intelligent power management, innovative technologies and system integration have become key to achieving more efficient, environmentally friendly, and sustainable power systems.

At the unveiling ceremony, Huang Xiucheng, Vice President of Nano Semiconductor System Application Engineering, and Li Baokui, Senior Vice President of Zhaoyi Innovation and General Manager of MCU Business Unit, jointly unveiled the laboratory and conducted in-depth discussions on future cooperation directions and laboratory operation models. Both parties agreed to use the joint laboratory as a platform to deepen technological collaboration and accelerate the transformation of innovative achievements.

Huang Xiucheng, Vice President of Nano Micro Semiconductor System Application Engineering, stated, "The establishment of the joint laboratory is an important milestone in the deepening of the strategic cooperation between Nano Micro Semiconductor and Zhaoyi Innovation. We will fully leverage the advantages of gallium nitride technology in efficient power management, and combine Zhaoyi Innovation's deep accumulation in the MCU field to jointly develop future oriented digital energy solutions, bringing more efficient and environmentally friendly innovative products to global customers. ”

Li Baokui, Senior Vice President and General Manager of MCU Business Unit at Zhaoyi Innovation, said, "Digital energy is one of the core application directions of Zhaoyi Innovation. Through cooperation with nano micro semiconductors, we will integrate high-performance GD32 MCU with leading GaNFast? Deep integration of gallium nitride technology provides customers with more competitive solutions. This is not only a collaborative innovation at the technical level, but also a firm commitment from both sides to promote green energy and assist in the intelligent transformation of industries. ”

The establishment of this joint laboratory is not only a recognition of the previous cooperation achievements between Zhaoyi Innovation and Nano Micro Semiconductor, but also foreshadows the broad prospects of cooperation between the two sides in the field of digital energy. In the future, the laboratory will continue to focus on technological innovation, accelerate the implementation of efficient power management solutions in more application scenarios, and drive the high-quality development of the digital energy industry.

About Navitas Semiconductor

Nanomicro Semiconductor (NASDAQ stock code: NVTS) is a leader in the next-generation power semiconductor industry, focusing on gallium nitride (GaN) and integrated circuit (IC) devices, as well as high-voltage silicon carbide (SiC) technology research and development, aiming to promote innovation in artificial intelligence and data centers, energy and grid infrastructure, high-performance computing, and industrial applications. With over 30 years of experience in the field of wide bandgap technology, GaNFast, a subsidiary of NanoMicro, has? The power chip highly integrates gallium nitride power devices, driving, control, sensing, and protection functions, achieving faster power transmission, higher system power density, and superior energy efficiency performance. GeneSiC? High voltage silicon carbide devices use patented groove assisted planar technology to provide industry-leading voltage resistance, efficiency, and reliability for medium voltage power grids and infrastructure applications. Nano Micro Semiconductor has owned or is currently applying for over 300 patents, making it the world's first semiconductor company to obtain CarbonNeutral certification.

Nanosemiconductor, GaNFast, GaNSense, GeneSiC, and Navitas logos are trademarks or registered trademarks of Nanosemiconductor Co., Ltd. and its subsidiaries. The other brands, product names, and logos mentioned in the article are trademarks or registered trademarks of their respective owners.

About GigaDevice Innovation

Zhaoyi Innovation Technology Group Co., Ltd. (stock code 603986) is a leading global supplier of Fabless chips. The company was founded in April 2005 and is headquartered in Beijing, China. It has branches in multiple countries and regions around the world, and its marketing network covers the globe, providing high-quality and convenient localized support services. Zhaoyi Innovation is committed to building a complete ecosystem driven by memory, microcontrollers, sensors, and analog products, providing customers in the industrial, automotive, computing, consumer electronics, IoT, mobile applications, and communication fields with comprehensive product technology and services. It has passed the highest level ASIL D system certification for automotive functional safety in ISO26262:2018, and has obtained IEC 61508 functional safety product certification, as well as ISO 9001, ISO 14001, ISO 45001 and other system certifications and Dun&Bradstreet certification. At the same time, the company has established strategic partnerships with multiple world-renowned wafer fabs and packaging testing factories to jointly promote technological innovation in the semiconductor field. For more information, please visit www.GigaDevice.com.

*Zhaoyi, Zhaoyi Innovation GigaDevice、GD32， All of its logos are trademarks or registered trademarks of Zhaoyi Innovation Technology Group Co., Ltd. All other names or brands are owned by their owners.

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Name: John Chen

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This is reported by Top Components, a leading supplier of electronic components in the semiconductor industry. They are committed to p with the most necessary, outdated, licensed, and hard-to-find parts.

Media Relations Name: John Chen

Email: salesdept@topcomponents.ru