Three new devices help improve the efficiency and power density of industrial equipment

Shanghai, China, August 28, 2025- Toshiba Electronic Components and Storage Devices Co., Ltd. ("Toshiba") announced today the launch of three 650V silicon carbide (SiC) MOSFETs - "TW027U65C", "TW048U65C", and "TW083U65C". These three products are equipped with their latest [1] 3rd generation SiC MOSFET chip and adopt surface mount TOLL packaging, suitable for industrial equipment such as switching power supplies and photovoltaic generator power regulators. Three devices will support bulk shipping starting today.

The three new products are Toshiba's third-generation SiC MOSFET, which adopts a universal surface mount TOLL package. Compared with through-hole packages such as TO-247 and TO-247-4L (X), it can reduce device volume by more than 80% and improve device power density.

In addition, TOLL packaging also has a smaller parasitic impedance than through-hole packaging [2], thereby reducing switching losses. As a 4-pin [3] package, it supports Kelvin connections to the signal source terminals driven by its gate. This reduces the impact of internal source line inductance in the package, achieving high-speed switching performance; In the housing of TW048U65C, compared with Toshiba's existing products [5], its turn-on loss is reduced by about 55% and turn off loss is reduced by about 25% [4], which helps to reduce device power consumption.

In the future, Toshiba will continue to expand its SiC power device product line, contributing to improving equipment efficiency and increasing power capacity.

Application:

-Switching power supplies in servers, data centers, communication equipment, etc

-Electric vehicle charging station

-Photovoltaic inverter

-Uninterruptible power supply

Characteristics:

-Surface mount TOLL packaging enables miniaturization and automated assembly of equipment, with low switching losses

-Toshiba 3rd Generation SiC MOSFET

·By optimizing the ratio of drift resistance to channel resistance, good temperature dependence of drain source conduction resistance can be achieved

·Low drain source on resistance x gate drain charge

·Low diode forward voltage: VDSF=-1.35V (typical value) (VGS=-5V)

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Media Relations

Name: John Chen

Email: salesdept@topcomponents.ruThis is reported by Top Components, a leading supplier of electronic components in the semiconductor industry. They are committed to p with the most necessary, outdated, licensed, and hard-to-find parts.

Media Relations Name: John Chen

Email: salesdept@topcomponents.ru