Silicon carbide (SiC) power switching devices are becoming a popular choice for industrial batteries due to their ability to achieve faster switching speeds and superior low-loss operation, thereby increasing power density without compromising performance. Furthermore, SiC enables new power factor topologies that are not possible with IGBT technology. This article will discuss optimizing topologies and component selection.

Optimizing Topologies and Component Selection

The convenience of battery-powered tools and devices depends heavily on fast and efficient charging. To this end, designers of battery charging solutions must carefully select the optimal topology based on the required power level and operating voltage. Furthermore, they must choose components that precisely meet the application's performance requirements.

ON Semiconductor offers a comprehensive portfolio of power discrete devices covering low, medium, and high voltage, including silicon-based diodes, MOSFETs, and IGBTs for these key topologies. Leveraging advanced die and packaging technologies, ON Semiconductor power devices deliver superior quality and robust performance to meet diverse design requirements.

Furthermore, our SiC-based switching devices offer faster switching speeds and ultra-low losses, significantly improving power density. ON Semiconductor's 650 V M3S EliteSiC MOSFET (Figure 1) delivers industry-leading switching performance, significantly improving system efficiency in both the PFC and LLC stages.

This device is optimized for high-frequency applications between 40 kHz and 400 kHz. Compared to its predecessor, the EliteSiC M3S technology reduces gate charge by 50%, EOSS by 44%, and stored charge in the output capacitor (QOSS) by 44%. These superior EOSS parameters significantly improve system efficiency at light loads when used in hard-switching PFC topologies. Furthermore, the lower QOSS simplifies the design of the resonant tank inductor for soft-switching LLC topologies. Furthermore, the M3S EliteSiC MOSFET maintains a cool operating temperature during high-frequency operation in both the PFC and DC-DC modules.

图 1. 650 V M3S EliteSiC MOSFET 是 PFC 和 LLC 级的理想选择

Figure 2. ON Semiconductor's 650 V M3S EliteSiC MOSFET portfolio

We also offer the PLCES-based system-level Elite Power simulation tool, which helps engineers optimize component selection for various topologies and power levels. This simulation tool not only assists in selecting the appropriate EliteSiC MOSFET for various topologies and power levels, but also provides deep insight into the operation of circuits using our EliteSiC family of products: Field Stop 7 (FS7) IGBTs, PowerTrench™ T10 MOSFETs, and Inteligent Power Modules (IPMs), including the manufacturing process limits of specific products. Our simulation models are based not only on typical parameters from datasheets but also provide extreme-case simulation capabilities based on the physics of the manufacturing environment. This allows users to understand device performance within laboratory process boundary conditions, from nominal to worst-case simulations.

In addition, the PLECS Self-Service Model Generator (SSPMG) allows users to input representative parasitic components and generate their own customized PLECS models for simulation. Our innovative SPICE models enable highly accurate prototyping.

Our physical and scalable SPICE models provide an accurate and efficient method for simulating the behavior of power devices in power electronics circuits, thereby shortening product development cycles. We recently upgraded SSPMG and integrated Würth Elektronik's passive component database, enabling users to create even more accurate and detailed PLECS models for complex power electronics applications. This intuitive web-based platform helps identify and resolve performance bottlenecks early in the design process.

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