On July 2, 2025, Beijing News, China - Rexa Electronics (TSE: 6723), a global semiconductor solution provider, today announced the launch of three new high-voltage 650V GaN FETs - TP65H030G4PRS, TP65H030G4PWS and TP65H030G4PQS, which are suitable for AI data centers and server power sources (including the new 800V high-voltage DC architecture), electric vehicle charging, UPS battery backup equipment, battery energy storage and solar inverters. This fourth generation enhanced (Gen IV Plus) product is designed for multi kilowatt applications. It combines efficient GaN technology with silicon based compatible gate drive inputs to significantly reduce switching power loss while retaining the ease of operation of silicon based FETs. The new product provides TOLT, TO-247 and TOLL packaging options, enabling engineers to flexibly customize thermal management and circuit board design for specific power architectures.

These three new products are based on the robust and reliable SuperGaN platform. The platform adopts the depletion (d-mode) constant shutdown architecture that has been verified by practical applications, and is initiated by Transporm (Ruisa has acquired the company in June 2024). Compared with silicon based, silicon carbide (SiC) and other GaN products, products based on low loss depletion technology have higher efficiency. In addition, they minimize power loss through lower gate charge, output capacitance, cross loss and dynamic resistance effects, and have higher 4V threshold voltage - a performance that current enhanced (e-mode) GaN products cannot achieve.

The new Gen IV Plus product is 14% smaller than the bare chip of the previous generation Gen IV platform. Based on this, the lower on resistance (RDS (on)) of 30 milliohms (m Ω) is achieved, which is 14% lower than the previous generation product, and the performance index (FOM) of the product of on resistance and output capacitance is increased by 20%. Smaller die sizes help reduce system costs, reduce output capacitance, and thus improve efficiency and power density. These advantages make Gen IV Plus products an ideal choice for applications that are cost sensitive and require high heat dissipation, especially in scenarios that require high performance, efficiency and compact size. They are fully compatible with the existing design, easy to upgrade, and protect the existing project investment.

These products adopt compact TOLT, TO-247 and TOLL packaging, providing a wide range of packaging options for 1kW to 10kW power systems, meeting the requirements of thermal performance and layout optimization, and can also be connected in parallel with higher power power systems. The new surface mount package includes a bottom heat dissipation path (TOLL) and a top heat dissipation path (TOLT), which help to reduce the housing temperature and facilitate parallel connection of devices when higher conduction current is required. In addition, the commonly used TO-247 package brings customers higher heat capacity to achieve higher power.

Primit Parikh, Vice President of the GaN Business Division at Renesas said: "The successful release of Gen IV Plus GaN products marks the first milestone step of Renesas in the GaN technology field since the completion of the acquisition of Transporm last year. In the future, we will deeply integrate the market proven SuperGaN technology with the rich drive and controller product portfolio of Renesar, and we are committed to creating a complete power supply solution. These products can not only be used as independent FETs, but also be integrated into the complete system solution design with Rexa controller or drive products. This innovative combination will provide designers with product design solutions with higher power density, smaller volume, higher efficiency, and lower total system cost. ”

Unique depletion type constant turn off design, realizing reliability and easy integration

Like the previous depletion type GaN products, the new Renesa GaN products adopt the unique configuration of integrated low-voltage silicon based MOSFETs, with seamless normal turn off operation, and give full play to the advantages of high voltage GaN in low loss and high efficiency switching. Because its input stage uses silicon based FETs, SuperGaN FETs can be driven using standard off the shelf gate drivers, instead of the special drivers that are usually required for enhanced GaNs. This compatibility not only simplifies the design process, but also reduces the threshold for system developers to adopt GaN technology.

In order to meet the high requirements of electric vehicles (EV), inverters, AI data center servers, renewable energy and industrial power conversion, GaN based switching products are rapidly becoming the key technology of the next generation of power semiconductors. Compared with SiC and silicon based semiconductor switch products, they have higher efficiency, higher switching frequency, and smaller size.

Renesar has a unique advantage in the GaN market, providing a comprehensive GaN FET solution covering both high power and low power, which is in sharp contrast to many other manufacturers who have only succeeded in the low power range. The rich product portfolio enables Rexa to meet a wider range of application needs and customer groups. Up to now, Rexa has shipped more than 20 million GaN devices for high and low power applications, with a cumulative on-site operation time of more than 30 billion hours.

This is reported by Top Components, a leading supplier of electronic components in the semiconductor industry

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Name: John Chen

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