Shanghai, China, June 23, 2025- As artificial intelligence continues to redefine the boundaries of computing, the infrastructure that powers these advances must also develop synchronously. As a recognized leader in power semiconductor technology, ROHM is honored to be one of the major silicon suppliers supporting Nvidia's new 800V high-voltage direct current (HVDC) architecture. This marks a key shift in data center design, making megawatt scale artificial intelligence factories more efficient, scalable, and sustainable.

ROHM not only provides silicon (Si) power components, but also has a rich product lineup including wide bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN), which can provide better solutions for data center design.

Thanks to its high cost-effectiveness and reliability, Si MOSFETs have been widely used for power conversion in the automotive and industrial equipment markets. Si MOSFETs are also suitable for upgrading current AI infrastructure due to their good balance between price, efficiency, and reliability.

ROHM's Si MOSFET representative product "RY7P250BM" has been certified as a recommended device by global cloud platform enterprises. This product is designed as a necessary hot swappable circuit for AI servers, using a 100V power MOSFET for a 48V power system. It achieves an industry wide SOA (safe working area) in a small package of 8080 and achieves an ultra-low on resistance of only 1.86m Ω. In cloud platforms that require high density and high availability, it helps to reduce power losses and improve system reliability.

The advantage of SiC components is that they can reduce losses in high voltage and high current applications in industrial and other fields. The Nvidia 800V HVDC architecture is designed to power server racks with power exceeding 1MW, which also plays a crucial role in advancing its large-scale deployment plan. The core of this new infrastructure is the ability to directly convert 13.8kV AC power from the power grid into 800V DC power. The traditional 54V rack power supply system is not only limited by physical space (to meet miniaturization requirements), but also has problems such as high copper material usage and high power conversion losses.

ROHM's SiC MOSFET can exhibit excellent performance in high voltage and high power environments, not only improving efficiency by reducing switching and conduction losses, but also achieving high reliability to meet high-density system design requirements in an ultra small size. These features perfectly align with Nvidia's 800V HVDC architecture's pursuit of reducing copper usage, minimizing energy loss, and simplifying overall power conversion in data centers.

In addition, as a supplement to SiC products, ROHM actively promotes the research and development of GaN technology and has now launched EcoGaN? The series of products includes GaN HEMTs with 150V and 650V voltage resistance, gate drivers, and Power Stage ICs that integrate these devices. SiC performs well in high voltage and high current applications, while GaN exhibits excellent performance in the voltage range of 100V~650V, with outstanding dielectric breakdown strength, low on resistance, and ultra high speed switching characteristics. In addition, in Rom's own Nano Pulse Control? With the support of technology, its switching performance has been further improved, and the pulse width can be shortened to a minimum of 2ns. These products fully meet the needs of AI data centers for miniaturization and high-efficiency power systems.

In addition to power devices, ROHM has also launched high output power SiC module products such as the top heat dissipation HSDIP20 equipped with the 4th generation SiC chip. These 1200V SiC modules have been optimized for LLC based AC-DC converters and primary DC-DC converters, enabling efficient and high-density power conversion. With its excellent heat dissipation and scalability, it has become the top choice for Nvidia architecture's envisioned 800V power transmission and distribution systems and other megawatt level AI factories.

The implementation of 800V HVDC infrastructure requires collaborative efforts across the entire industry. As an important partner in realizing the next generation of AI factories, ROHM will not only maintain close collaboration with industry leaders such as NVIDIA, but also engage in deep cooperation with data center operators and power manufacturers. By providing advanced technologies in wide bandgap semiconductors such as SiC and GaN, which ROHM excels in, we contribute to building a sustainable and energy-efficient digital society.

This is reported by Top Components, a leading supplier of electronic components in the semiconductor industry

They are committed to providing customers around the world with the most necessary, outdated, licensed, and hard-to-find parts.

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Name: John Chen

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