X-FAB adds isolation level to the 180 nanometer XH018 process, enhancing SPAD integration capability

New ISOMOS1 module achieves higher fill factor and smaller area requirements

Beijing, China, June 23, 2025- X-FAB Silicon Foundries ("X-FAB"), a globally recognized and outstanding analog/mixed signal wafer foundry, announced today the launch of a new isolation level in its 180 nanometer XH018 semiconductor process platform, aimed at supporting more compact and efficient single photon avalanche diode (SPAD) applications. The new isolation level can achieve higher functional integration and improve pixel density and fill factor, thereby reducing chip area.

Adopting the new compact 25V isolation level module ISOMOS1 (left)

Example design of 4 × 3 SPAD pixels for the previously required module ISOMOS2 (right)

SPAD is a key component in many emerging applications, covering such fields as laser radar (LiDAR), 3D imaging, depth perception, quantum communication, and biomedical sensing in enhanced/virtual reality systems (AR/VR) for autonomous vehicle. X-FAB has provided multiple SPAD devices on the 180 nanometer XH018 platform, with effective area ranging from 10 μ m to 20 μ m. This includes a version optimized for near-infrared, which can achieve higher photon detection probability (PDP) performance in the near-infrared band.

Compact pixel spacing and high fill factor are crucial for achieving high-resolution SPAD arrays. The newly launched ISOMOS1 by X-FAB, as a 25V isolation level module, can greatly optimize the compactness of transistor isolation structure without the need for additional mask layers, and is perfectly compatible with other existing SPAD devices of X-FAB.

The advantages of this technological improvement in SPAD pixel layout are very obvious. Taking a typical 4 × 3 SPAD array (each optical area is 10 × 10 μ m2) as an example, by adopting a new isolation level, the total chip area can be reduced by about 25% and the fill factor can be increased by about 30% compared to the previous isolation level. By further optimizing pixel design, there can be significant improvements in area efficiency and detection sensitivity.

X-FAB's SPAD solution has been widely applied in various scenarios that require direct time of flight (dToF) ranging, such as smartphones, drones, and projection devices. This new technological achievement is suitable for applications that require high-resolution sensing in compact spaces. It can achieve precise depth perception in various scenarios, including industrial distance detection and robot sensing, such as establishing protection in collaborative robot work areas to avoid collisions. In addition to improving performance and integration density, this new isolation level also opens up application space for more SPAD based systems, especially those that require low-noise, high-speed single photon detection in compact spaces.

Introducing a new isolation level in the XH018 process is an important step forward in driving SPAD integration, "explained Heming Wei, Marketing Manager of X-FAB Optoelectronics Technology. It not only achieves a more compact layout and superior performance, but also allows our validated and reliable 180 nanometer platform to be used for the development of more advanced sensing systems. ”

The new ISOMOS1 module and Process Design Kit (PDK) have been officially launched, which can be used to support efficient evaluation and development of next-generation SPAD arrays. X-FAB will participate in the Sensors Converge 2025 exhibition in Santa Clara, California, USA (June 24-26) and showcase its latest sensor technology at booth 847.

abbreviation:

AR Augmented Reality

LiDAR laser radar

NIR Near Infrared

PDK Process Design Kit

SPAD single photon avalanche diode

VR Virtual Reality

Ref: XFA037D4

Regarding X-FAB:

X-FAB is a leading analog/mixed signal and MEMS wafer foundry group that produces silicon wafers for automotive, industrial, consumer, medical, and other applications. X-FAB adopts modular CMOS and SOI processes with a size range from 1.0 μ m to 110nm, as well as its unique optoelectronic, SiC, GaN, and microelectromechanical systems (MEMS) long-life processes, to create the highest quality standards, excellent manufacturing processes, and innovative solutions for global customers. X-FAB's analog digital integrated circuits (mixed signal ICs) and sensor MEMS are produced at six production bases in Germany, France, Malaysia, and the United States, with approximately 4500 employees worldwide.

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